shantou huashan electronic devices co.,ltd . silicon controlled rectifier ? features * repetitive peak off-state voltage : 600v * r.m.s on-state current(i t(rms) =16a) * low on-state voltage (1.35v(typ.)@ i tm ) * non-isolated type ? general description standard gate triggering scr is su itable for the application where requiring high bi-directional blocking voltage ca pability and also suitable for over voltage pr otection,motor control cicuit in power tool,inrush current limit circuit and heating control system. ? absolute maximum ratings ? t a =25 ?? unless otherwise specified ? t stg ?a?a storage temperature ------------------------------------------------------ - 40~125 ?? t j ?a?a operating junction temperature ---------------------------------------------- - 40~125 ?? v drm ?a?a repetitive peak off-state voltage ---------- ------------------- ---------------------- ----------------- 600v i t ? rms ??a?a r.m.s on-state current ? 180o conduction angles ? ---------------------------------------- 16a i t(av) ?a?a average on-state current (half sine wave : t c = 102 c) -----------------------------------------10a i tsm ?a?a surge on-state current (1/2 cycle, 60hz, sine wave, non-repeti tive) -------------- ------------ 200a i 2 t ?a?a circuit fusing consid erations(t = 10ms) ------------------ ------------------------- ------------------ 180 a 2 s p gm ?a?a forward peak gate power dissipation (t a =25 ?? ) --------------------------------------------------- 20w p g(av) ?a?a forward average gate power dissipation (t a =25 ?? ,t=8.3ms) ---------------------------------- 1w i fgm ?a?a forward peak gate current -------------------------------------------------------------------------------- 4a v rgm ?a?a reverse peak gate voltage ------------------------------------------------------------------------------- 5v HCP16C60
shantou huashan electronic devices co.,ltd . ? electrical characteristics ? t a =25 ?? unless otherwise specified ? symbol items min. typ. max. unit conditions i drm repetitive peak off-state current 10 200 ua v ak =v drm t a =25 ?? t a =125 ?? v tm peak on-state voltage (1) 1.6 v i tm =24a,tp=380s i gt gate trigger current ? 2 ? 15 ma v ak =6v(dc), r l =10 ohm v gt gate trigger voltage (2) 1.5 v v ak =6v(dc), r l =10 ohm t a =25 ?? v gd non-trigger gate voltage 0.2 v v ak =12v, r l =100 ohm t a =125 ?? i h holding current 20 ma i t=100ma, gate open, t a =25 ?? rth(j-c) thermal resistance 1.1 ?? /w junction to case rth(j-a) thermal resistance 60 ?? /w junction to ambient dv/dt critical rate of rise off-state voltage 200 v/s linear slope up to v d =v drm 67% gate open tj=125 ?? 1. forward current applied for 1 ms maximum duration,duty cycle ? 1%. 2. r gk current is not included in measurement ? performance curves figure 1 ? gate characteristics figure 2 ? maximum casetemperture gate current (ma) average on-state current (a) HCP16C60 gate voltage (v) max. allowable case temperture (c)
shantou huashan electronic devices co.,ltd . figure 3-typical forward voltage(v) figure 4-thermal response on-state voltage (v) time (sec) figure 5-typical gate trigger voltage vs figure 6-typical gate trigger current vs junction temperature junction temperature junction temperature (c) junction temperature (c) figure 7-typical holding current figure 8-power dissipation junction temperature (c) average on-state current (a) HCP16C60 on-state current(a) transient thermal im p erdance ( c ) max. average power dissipation (w)
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